A color-coded discrete representation of Ge deposited on an approximately 6um thick graded layer, with a uniform grade in atomic fraction between the alloys of Si and Ge, deposited in an ASM Epsilon Chemical Vapor Deposition epitaxial reactor. Note the undulations characteristic of the strain relief mechanism -- misfit formation in the graded region below the surface. Despite the harsh appearance of the image, the peak angle of the undulations is approximately one degree. Note the streaks near the top are a measurement artifact.